Display device and method of manufacturing the same

ABSTRACT

A display device includes: a central area having a display area on a substrate; and a peripheral area around the central area; a plurality of pads arranged along one direction in the central area; a plurality of insulating patterns adjacent the plurality of pads; and a slit between the plurality of insulating patterns in the peripheral area, wherein the slit is formed by removing at least a portion of an insulating material of the plurality of insulating patterns.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.15/608,959, filed May 30, 2017, which is a continuation of U.S. patentapplication Ser. No. 14/609,360, filed Jan. 29, 2015, now U.S. Pat. No.9,666,814, which claims priority to and the benefit of Korean PatentApplication No. 10-2014-0027428, filed Mar. 7, 2014 and Korean PatentApplication No. 10-2014-0063822, filed on May 27, 2014, the entirecontent of all of which is incorporated herein by reference.

BACKGROUND 1. Field

One or more embodiments of the present invention relate to a displaydevice and a method of manufacturing the same.

2. Description of the Related Art

In the display field, a display device using a flexible substrate thatis light-weight and thin, and has excellent impact resistance is beingdeveloped. A display device using a flexible substrate may bemanufactured by cutting a mother glass such that a plurality of displaydevices may be manufactured from a mother glass. For example, a displaysubstrate may be cut along cutting lines by using a press to separatethe substrate for individual display devices.

However, when the display substrate is cut by physical pressure, such asa press, regions around the cutting lines may be burred or distorted.Due to such a burr or distortion, layers on the display substrate may bedetached or cracked, which may cause a line disconnection. Also, whilecutting the display substrate, layers on the display substrate aroundthe cutting lines may be separated, and thus reliability of the displaydevice may deteriorate.

Accordingly, attempts to expose the display substrate by removing layersfrom the display substrate around the cutting lines have been made.However, when a remaining metal film exists in a stepped portion formedby removing the layers around the cutting lines, a short may begenerated as the remaining metal films are electrically coupled to linesincluded in a circuit board on which an external circuit is mountedwhile coupling the circuit board to pads formed in the displaysubstrate.

SUMMARY

One or more embodiments of the present invention include a displaydevice using a flexible substrate, and a method of manufacturing thesame.

One or more embodiments of the present invention relate to a displaydevice using a flexible substrate, and a method of manufacturing thesame.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments.

According to one or more embodiments of the present invention, a displaydevice includes: a central area having a display area on a substrate; aperipheral area around the central area; a plurality of pads arrangedalong one direction in the central area; a plurality of insulatingpatterns adjacent the plurality of pads; and a slit between theplurality of insulating patterns in the peripheral area, wherein theslit is formed by removing at least a portion of an insulating materialof the plurality of insulating patterns.

The plurality of pads may each include an extension line, and theplurality of insulating patterns may overlap the extension lines.

The plurality of insulating patterns may include an inorganic material.

The display device may further include an organic film covering anuppermost surface and at least one region of a side surface of theplurality of insulating patterns.

The peripheral area may include a region exposing a top surface of thesubstrate.

The peripheral area may include a pad peripheral area adjacent to theplurality of pads and comprises the plurality of insulating patterns andthe slit, and the region exposing the top surface of the substrate maybe adjacent to the pad peripheral area.

The region exposing the top surface of the substrate may be adjacent toan edge of the substrate.

An edge of the substrate may be defined by a cutting line.

At least one inorganic film may be in a central area of the substrate.

The plurality of insulating patterns may have a shape coupled to the atleast one inorganic film.

The plurality of pads may be on the at least one inorganic film.

The at least one inorganic film may include a plurality of layers.

The plurality of insulating patterns may include a plurality ofinorganic patterns stacked on each other.

The plurality of insulating patterns may include a first inorganicpattern, and a second inorganic pattern on the first inorganic pattern.

A top surface of the first inorganic pattern may be completely coveredby the second inorganic pattern.

A top surface of the first inorganic pattern may have an exposed region.

The display device may further include an organic film covering at leasta top surface and a side surface of the second inorganic pattern of theplurality of insulating patterns.

A first inorganic film may be between the plurality of insulatingpatterns and the substrate.

A groove may be formed in a region of the first inorganic film that isremoved such that a groove is formed in a region of the first inorganicfilm overlapping the slit.

The display device may further include an organic film covering at leasta top surface and a side surface of the plurality of insulating patternswhile not covering a portion of the first inorganic film correspondingto the slit.

The display device may further include, in the central area: a bufferfilm on the substrate; and a plurality of thin-film transistors (TFTs)on the buffer film and comprising an active layer, a gate electrode, asource electrode, and a drain electrode, and at least one insulatingfilm may be adjacent to at least one of the active layer, the gateelectrode, the source electrode, and the drain electrode, and theplurality of insulating patterns may be a same material as the at leastone insulating film.

The plurality of insulating patterns and the at least one insulatingfilm may be coupled to each other.

The at least one insulating film may include at least one of a bufferfilm formed on the substrate, a gate insulating layer insulating thegate electrode and an active layer, or an interlayer dielectric filminsulating the source and drain electrodes and the gate electrode.

The at least one insulating film may include at least one of a bufferfilm formed on the substrate, a gate insulating layer insulating thegate electrode and an active layer, or a passivation film formed on thesource and drain electrodes.

The display device may further include an organic film covering theplurality of TFTs, wherein the organic film covers at least one regionof an uppermost surface and a side surface of the plurality ofinsulating patterns.

The display device may further include: a pixel electrode electricallycoupled to at least one of the plurality of TFTs; and a pixel-definingfilm covering a portion of the pixel electrode and defining an emissionregion, wherein the pixel-defining film covers at least one region of anuppermost surface and a side surface of the plurality of insulatingpatterns.

The display device may further include a counter electrode facing thepixel electrode, and an organic emission layer may be between the pixelelectrode and the counter electrode.

The substrate may include a flexible material.

The display device may further include: dummy insulating patterns spacedapart from the plurality of insulating patterns, wherein the dummyinsulating patterns do not correspond to the plurality of pads; and adummy slit between the dummy insulating patterns, wherein a portion ofthe dummy insulating patterns is removed in the peripheral area to formthe dummy slit.

An angle formed by an extension line of the plurality of pads and anedge of the substrate may be smaller or larger than 90° such that theplurality of pads have a slant shape, and an angle formed by anextension line of the slit and the edge of the substrate may be smalleror larger than 90° such that the slit has a slant shape.

The angle formed by the extension line of the plurality of pads and theedge of the substrate may be the same as the angle formed by theextension line of the slit and the edge of the substrate.

The display device may further include a circuit board on which anexternal circuit is mounted such that an electric signal is transmittedto the display area, and a plurality of wires of the circuit board maybe coupled to the plurality of pads.

The plurality of wires of the circuit board may be on the plurality ofinsulating patterns, and may be spaced apart from the slit.

According to some embodiments of the present invention, in a method ofmanufacturing a display device, the display device including a centralarea having a display area on a substrate, and a peripheral area aroundthe central area, the method includes: forming, in the central area, aplurality of pads along one direction; forming, in a region of theperipheral area adjacent to the plurality of pads, a plurality ofinsulating patterns corresponding to the plurality of pads; and forminga slit between the plurality of insulating patterns by a portion of aninsulating material of the plurality of insulating patterns.

The method may further include forming an inorganic film in a centralarea of the substrate, and the plurality of insulating patterns mayinclude the inorganic film.

The at least one inorganic film may include a plurality of layers.

The method may further include: forming the plurality of insulatingpatterns spaced apart from each other across the slit by patterning alayer comprising at least an uppermost layer from among the plurality oflayers of the inorganic film; and after forming the plurality ofinsulating patterns, forming the plurality of pads on any one of theplurality of layers of the inorganic film.

The method may further include, after forming the plurality of pads,removing a layer comprising at least a lowermost layer of the pluralityof layers of the inorganic film, in a region corresponding to the slit.

The peripheral area may include a region exposing a top surface of thesubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readilyappreciated from the following description of the embodiments, taken inconjunction with the accompanying drawings in which:

FIG. 1 is a plan view schematically illustrating a display deviceaccording to an embodiment of the present invention;

FIG. 2 is an enlarged plan view of the region II of FIG. 1;

FIG. 3 is a cross-sectional view taken along the line a-a′ of FIG. 2,according to an embodiment of the present invention;

FIG. 4 is a plan view schematically illustrating a display deviceaccording to another embodiment of the present invention;

FIGS. 5 through 14 are cross-sectional views taken along the line a-a′of FIG. 2, according to other embodiments of the present invention;

FIGS. 15 and 16 are enlarged plan views of modified examples of FIG. 2;

FIGS. 17 through 25 are cross-sectional views for describing a method ofmanufacturing the display device of FIG. 1 based on the line b-b′ ofFIG. 1, according to an embodiment of the present invention;

FIGS. 26 and 27 are cross-sectional views for describing a method ofmanufacturing the display device of FIG. 1 based on the line b-b′ ofFIG. 1, according to another embodiment of the present invention;

FIGS. 28 through 31 are cross-sectional views for describing a method ofmanufacturing the display device of FIG. 1 based on the line b-b′ ofFIG. 1, according to another embodiment of the present invention;

FIG. 32 is a plan view schematically illustrating a display deviceaccording to a comparative example;

FIG. 33 is an enlarged plan view of the region VII of FIG. 32;

FIG. 34 is a plan view schematically illustrating a display deviceaccording to an embodiment of the present invention;

FIG. 35 is an enlarged plan view of the region IX of FIG. 34; and

FIG. 36 is a cross-sectional view taken along the line Q-Q′ of FIG. 35.

DETAILED DESCRIPTION

Reference will now be made in some detail to embodiments, examples ofwhich are illustrated in the accompanying drawings, wherein likereference numerals refer to like elements throughout. In this regard,the present embodiments may have different forms and should not beconstrued as being limited to the descriptions set forth herein.Accordingly, the embodiments are merely described below, by referring tothe figures, to explain aspects of the present description.

It will be understood that although the terms “first”, “second”, etc.may be used herein to describe various components, these componentsshould not be limited by these terms. These components are only used todistinguish one component from another.

As used herein, the singular forms “a,” “an,” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

It will be further understood that the terms “include” and/or“including” used herein specify the presence of stated features orcomponents, but do not preclude the presence or addition of one or moreother features or components.

It will be understood that when a layer, region, or component isreferred to as being “formed on,” another layer, region, or component,it can be directly or indirectly formed on the other layer, region, orcomponent. That is, for example, intervening layers, regions, orcomponents may be present.

Sizes of elements in the drawings may be exaggerated for convenience ofexplanation. In other words, because sizes and thicknesses of componentsin the drawings are arbitrarily illustrated for convenience ofexplanation, the following embodiments are not limited thereto.

In the following examples, the x-axis, the y-axis, and the z-axis arenot limited to three axes of the rectangular coordinate system, and maybe interpreted in a broader sense. For example, the x-axis, the y-axis,and the z-axis may be perpendicular to one another, or may representdifferent directions that are not perpendicular to one another.

When a certain embodiment may be implemented differently, a specificprocess order may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items. Expressions such as “atleast one of,” when preceding a list of elements, modify the entire listof elements and do not modify the individual elements of the list.

FIG. 1 is a plan view schematically illustrating a display device 1000according to an embodiment of the present invention. FIG. 2 is anenlarged plan view of the region II of FIG. 1, and FIG. 3 is across-sectional view taken along the line a-a′ of FIG. 2, according toan embodiment of the present invention.

Referring to FIG. 1, the display device 1000 includes a substrate 100,according to some embodiments. The substrate 100 may be formed of anysuitable substrate material, for example, the substrate 100 may beformed of glass, a metal, or another organic material.

In some embodiments, the substrate 100 may be formed of a flexiblematerial such that the substrate 100 may be a flexible substrate that iseasily bent, curved, folded, or rolled. For example, the substrate 100may be formed of ultra-thin glass, metal, or plastic. When plastic isused, the substrate 100 may be formed, for example, of polyimide (PI),but a material of the substrate 100 is not limited thereto and may varyto include any other suitable flexible substrate material.

A plurality of the display devices 1000 may be formed on a mother glass,and an individual display device 1000 may be obtained by cutting thesubstrate 100 along a cutting line CL. FIG. 1 illustrates the individualdisplay device 1000 separated by cutting the substrate 100 along thecutting line CL. Accordingly, an edge of the substrate 100 is defined bythe cutting line CL.

The substrate 100 is divided into a peripheral area PA and a centralarea CA. The peripheral area PA is an area around or adjacent thecutting line CL, and the central area CA is an area inside theperipheral area PA.

However, the current embodiment is not limited thereto. For example, thecutting line CL may not exist. In other words, one display device 1000may be formed in one mother glass, and in this case, the substrate 100may be the one mother glass, and thus there may be no cutting line CL.At this time, the peripheral area PA is an area adjacent to an edge ofthe substrate 100, and the central area CA may be an area inside theperipheral area PA. For convenience of description, one or moreembodiments described hereinafter include the cutting line CL.

The central area CA includes a display area DA and a non-display areaNDA.

The display area DA may include at least one display element fordisplaying an image, for example, at least one organic light-emittingdevice (OLED). Also, the display area DA may include a plurality ofpixels.

The non-display area NDA is located around the display area DA. As shownin FIG. 1, the non-display area NDA may be formed to surround thedisplay area DA. Although not illustrated, in some embodiments, thenon-display area NDA may be formed adjacent to a plurality of sidesurfaces of the display area DA. In some embodiments, the non-displayarea NDA may be formed adjacent to a side surface of the display area.

The non-display area NDA includes at least a pad area PDA.

A driver or a plurality of pads 106 a are arranged in the pad area PDA.

In some embodiments, at least one inorganic film may be formed in thecentral area CA so as to prevent moisture or impurities from penetratinginto the display device 1000 through the substrate 100.

The peripheral area PA is an area around the cutting line CL, andlocated on a circumference of the substrate 100 along the cutting lineCL.

At least one region of the peripheral area PA includes a region where atop surface of the substrate 100 is exposed, and a pad peripheral areaPPA.

First, the region of the peripheral area PA where the top surface of thesubstrate 100 is exposed will be described.

As shown in FIG. 1, the peripheral area PA may include the region wherethe top surface of the substrate 100 is exposed at regions near an upperedge, a left edge, and a right edge of the substrate 100.

The region of the peripheral area PA where the top surface of thesubstrate 100 is exposed prevents a crack from spreading by aninsulating film, for example, inorganic films on the substrate 100,while cutting and separating the individual display device 100 from amother glass.

A width of the region of the peripheral area PA where the top surface ofthe substrate 100 is exposed may range from about several micrometers tohundreds of micrometers, from the cutting line CL to the central areaCA. For example, the width may range from 40 to 500 micrometers, or from50 to 350 micrometers.

In some embodiments, the peripheral area PA may not include the regionwhere the top surface of the substrate 100 is exposed. In other words,the peripheral area PA may only include the pad peripheral area PPA thatis described below, and may not expose the top surface of the substrate100 at a region near the edge of the substrate 100.

The pad peripheral area PPA of the peripheral area PA will now bedescribed.

The pad peripheral area PPA is a region adjacent to the pad area PDAfrom the peripheral area.

In some embodiments, assuming that a circuit board 200 of FIG. 32 onwhich an external circuit is mounted, for example a chip-on-film (COF),is bonded to the pad 106 a, the pad peripheral area PPA may be an areaoverlapped by the circuit board 200.

The pad peripheral areas PPA are located correspondingly to at least theplurality of pads 106 a.

The pad peripheral area PPA includes an insulating pattern IP. Theinsulating patterns IP are arranged correspondingly to the pads 106 a,and are spaced apart from each other across a slit S.

The insulating pattern IP is arranged to overlap an extension line ofthe pad 106 a. Accordingly, when a wire of a circuit board is coupled tothe pad 106 a, the wire is arranged on a top surface of the insulatingpattern IP, and thus the wire is prevented (or substantially prevented)from contacting an impurity on the substrate 100, for example, aremaining metal film or a metal particle, thereby preventing (orsubstantially preventing) instances of a short circuit.

In some embodiments, an effect of preventing a short circuit may beincreased by disposing the extension line of the pad 106 a to be spacedapart from the slit S.

Such an effect will be described in more detail later with reference toaccompanying drawings.

In FIGS. 2 and 3, the insulating pattern IP located in the padperipheral area PPA is described in more detail.

FIG. 2 illustrates a portion of the pad area PDA where the pad 106 a islocated, and a portion of the pad peripheral area PPA adjacent to thepad area PDA. The plurality of pads 106 a are formed on the substrate100.

Here, as described above, in some embodiments, at least one inorganicfilm may be formed in the central area CA on the substrate 100, and atthis time, the inorganic film may be formed in the pad area PDA, or thepad 106 a may be formed on the inorganic film of the pad area PDA.

The pads 106 a are arranged in one direction while being spaced apartfrom each other at predetermined intervals. In some embodiments, thepads 106 a may be arranged in a width direction (an x-axis direction ofFIG. 2) of each pad 106 a.

The plurality of insulating patterns IP are arranged in the padperipheral area PPA. As described above, in some embodiments, at leastone inorganic film may be formed in the central area CA on the substrate100, and at this time, the plurality of insulating patterns IP may becoupled to the inorganic film of the pad area PDA. However, the currentembodiment is not limited thereto, and the insulating pattern IP may beformed separately from the inorganic film formed in the central area CA.

The insulating patterns IP may be arranged in a row in a directioncorresponding to the plurality of pads 106 a. The insulating patterns IPmay be formed of an inorganic material. When the insulating pattern IPis coupled to the at least one inorganic film formed in the central areaCA according to some embodiments described above, the insulatingpatterns IP protrude from the pad area PDA towards the pad peripheralarea PPA, and are respectively arranged at locations corresponding tothe plurality of pads 106 a. In other words, each insulating pattern IPis located at a location where each pad 106 a extends in a lengthdirection (a y-direction of FIG. 2).

The slit S is arranged between the adjacent insulating patterns IP, andthe insulating patterns IP are spaced apart from each other across theslit S. Here, the slit S may be a narrow and long slit, and may be atype of opening that exposes a top surface of the substrate 100 or atype of opening that exposes an inorganic film having a top surfacelower than that of the insulating pattern IP according to one or moreembodiments that will be described later.

Referring to FIG. 3, the slit S is a type of opening that exposes thetop surface of the substrate 100. In FIG. 3, the insulating patterns IPare spaced apart from each other across the slit S that exposes the topsurface of the substrate 100.

The insulating pattern IP sequentially includes, from the substrate 100,a first inorganic pattern 101P and a second inorganic pattern 102P. Thesecond inorganic pattern 102P has a structure in which a plurality ofinorganic pattern layers 103P and 105P are stacked on each other. Theinsulating pattern IP shown in FIG. 3 is only an example, and thus thecurrent embodiment is not limited thereto and may include the insulatingpattern IP having any structure. For example, the insulating pattern IPmay include only one layer, two layers, or at least four layers.

Also, as described above, in some embodiments, at least one inorganicfilm may be formed in the central area CA on the substrate 100, and atthis time, the plurality of insulating pads IP may be coupled to aninorganic film of the pad area PDA. In other words, the first and secondinorganic patterns 101P and 102P that are sequentially stacked in theinsulating pattern IP may be respectively coupled to inorganic filmsthat are sequentially formed in the pad area PDA.

Also, in some embodiments, various inorganic films may be formed in thedisplay area DA of the central area CA. In other words, the plurality ofinsulating pads IP may be formed to be coupled to at least one of abuffer film adjacently formed on the substrate 100, and a gateinsulating layer, an interlayer dielectric film, a passivation film, andother various insulating films, which may be included in a thin-filmtransistor (TFT) for driving a pixel.

The first inorganic pattern 101P may be arranged in the central area CAto flatten the top surface of the substrate 100, and may include apattern of a buffer film operating as a barrier so as to prevent (orsubstantially prevent) moisture or impurity penetration through thesubstrate 100. Also, the second inorganic pattern 102P may be arrangedin the central area CA, and may include the inorganic pattern layer 103Pof a gate insulating layer for insulating an active later and a gateelectrode of a TFT from each other, and the inorganic pattern layer 105Pof an interlayer dielectric film for insulating the gate electrode andsource and drain electrodes from each other. Details thereof will bedescribed later.

In an embodiment of FIG. 3, the insulating pattern IP has a side endsurface in which a top surface of the first inorganic pattern 101P iscompletely covered by the second inorganic pattern 102P. In other words,a side end surface of the first inorganic pattern 101P and a side endsurface of the second inorganic pattern 102P may be located on the sameline.

However, FIG. 3 is only an example and the current embodiment may havevarious modified examples. For example, a side end surface of the firstinorganic pattern 101P and a side end surface of the second inorganicpattern 102P may be located on the same inclined line. As anotherexample, the side end surface of the first inorganic pattern 101P andthe side end surface of the second inorganic pattern 102P may not belocated on the same line. In some cases, a width of the first inorganicpattern 101P may be smaller than that of the second inorganic pattern102P.

FIG. 4 is a plan view schematically illustrating a display device 2000according to another embodiment of the present invention.

The display device 2000 according to the current embodiment includes aperipheral area PA and a central area CA on a substrate 200, wherein thecentral area CA includes a display area DA and a non-display area NDA,and the peripheral area PA includes at least a pad peripheral area PPA.

For convenience of description, differences between the display devices1000 and 2000 will be mainly described.

The pad peripheral area PPA includes insulating patterns IP and dummyinsulating patterns DIP.

The insulating patterns IP are formed correspondingly to pads 206 a, andare spaced apart from each other across a slit S.

The dummy insulating patterns DIP do not correspond to the pads 206 a,and are spaced apart from each other across a dummy slit DS.

The insulating pattern IP is arranged to overlap an extension line ofthe pad 206 a. Accordingly, when a wire is coupled to the pad 206 a, thewire is prevented (or substantially prevented) from contacting animpurity or contaminants, such as remaining metal film or metalparticles, on the substrate 200, thereby blocking or reducing instancesof a short circuit.

The dummy insulating pattern DIP may cover impurities or particlesremaining while forming various components on the substrate 200, andthus a defect caused by the impurities may be prevented or substantiallyprevented. Also, the dummy insulating pattern DIP and the dummy slit DSmay perform a stress relief function when the display device 2000including the substrate 200 is deformed, for example, bent or folded.

Because other components of the display device 2000 are substantiallysimilar those of the display device 2000 described above, some furtherdetails about the display device 2000 will not be repeated.

FIGS. 5 through 14 are cross-sectional views taken along the line a-a′of FIG. 2, according to other embodiments of the present invention.

According to an embodiment of FIG. 5, the slit S is a type of openingthat exposes the top surface of at least the substrate 100. In theembodiment of FIG. 5, the insulating pattern IP is spaced apart fromeach other across the slit S that exposes the top surface of at leastthe substrate 100.

Meanwhile, like an embodiment of FIG. 3, the insulating pattern IPincludes the first inorganic pattern 101P and the second inorganicpattern 102P sequentially from the substrate 100. As described above, insome embodiments, at least one inorganic film may be formed in thecentral area CA on the substrate 100, and at this time, the plurality ofinsulating patterns IP may be coupled to the inorganic film in the padarea PDA. However, the current embodiment is not limited thereto, andthe insulating pattern IP may be formed separately from the inorganicfilm in the central area CA.

Examples of forming the first and second inorganic patterns 101P and102P have been described above. In other words, the above-describedembodiments may be applied to details about connection relationshipswith the inorganic films in the central area CA.

Also, the second inorganic pattern 102P may have a structure in whichthe plurality of inorganic pattern layers 103P and 105P are stacked oneach other.

Unlike an embodiment of FIG. 3, the top surface of the first inorganicpattern 101P of the insulating pattern IP is partially exposed in anembodiment of FIG. 5. In other words, the side end surface of the firstinorganic pattern 101P and the side end surface of the second inorganicpattern 102P are not located on the same line, and the second inorganicpattern 102P only covers a part of the top surface of the firstinorganic pattern 101P.

In an embodiment of FIG. 5, a remaining metal film may be left on aregion where the top surface of the first inorganic pattern 101P isexposed, but a short circuit of the pad unit 106 a may be prevented.

Referring to an embodiment of FIG. 6, the slit S is a type of openingthat exposes a top surface of a first inorganic film 101. In anembodiment of FIG. 6, the insulating patterns IP are spaced apart fromeach other across the slit S that exposes the top surface of the firstinorganic film 101.

Meanwhile, the insulating pattern IP includes the second inorganicpattern 102P on the first inorganic film 101. As described above, insome embodiments, at least one inorganic film may be formed in thecentral area CA on the substrate 100, and at this time, the plurality ofinsulating patterns IP may be coupled to the inorganic films in the padarea PDA. However, the current embodiment is not limited thereto, andthe insulating patterns IP may be formed separately from the inorganicfilms in the central area CA.

Detailed examples of forming the second inorganic pattern 102P have beendescribed above. In other words, the above-described embodiments may beapplied to details about coupling relationships with the inorganic filmsin the central area CA. Also, the second inorganic pattern 102P may havea structure in which the plurality of inorganic pattern layers 103P and105P are stacked on each other.

In an embodiment of FIG. 6, the first inorganic film 101 is formed inthe pad peripheral area PPA and the insulating pattern IP only includesthe second inorganic pattern 102P, and thus an operation of patterningthe first inorganic film 101 may be omitted, thereby simplifyingprocesses.

Referring to an embodiment of FIG. 7, the slit S is a type of openingthat exposes the top surface of the first inorganic film 101. In anembodiment of FIG. 7, the insulating pattern IP is spaced apart fromeach other across the slit S that exposes the top surface of the firstinorganic film 101.

Meanwhile, the insulating pattern IP includes the second inorganicpattern 102P on the first inorganic film 101. As described above, insome embodiments, at least one inorganic film may be formed in thecentral area CA on the substrate 100, and at this time, the plurality ofinsulating patterns IP may be coupled to the inorganic films in the padarea PDA. However, the current embodiment is not limited thereto, andthe insulating patterns IP may be formed separately from the inorganicfilms formed in the central area CA.

Detailed examples of forming the second inorganic pattern 102P have beendescribed above. In other words, the above-described embodiments may beapplied to details about coupling relationships with the inorganic filmsin the central area CA. Also, the second inorganic pattern 102P may havea structure in which the plurality of inorganic pattern layers 103P and105P are stacked on each other.

In an embodiment of FIG. 7, the first inorganic film 101 has a groove(e.g., a predetermined groove) between the second inorganic patterns102P. Such a groove (e.g., a predetermined groove) may have any one ofvarious shapes, and as shown in FIG. 7, may have a boundary line spacedapart from the second inorganic pattern 102P.

However, the current embodiment is not limited thereto. In other words,as shown in FIG. 8, the boundary line of the groove (e.g., thepredetermined groove) of the first inorganic film 101 may be coupled toa side surface of the second inorganic pattern 102P.

Alternatively, the groove (e.g., the predetermined groove) may be formedin the first inorganic film 101 in any one of other various shapes, forexample, the boundary line of the groove (e.g., the predeterminedgroove) of the first inorganic film 101 may be formed to pass over theside surface of the second inorganic pattern 102P.

In embodiments of FIGS. 7 and 8, the top surface of the first inorganicfilm 101 where the slit S is located is partially removed. Accordingly,a thickness of the first inorganic film 101 corresponding to the slit Sin a region (e.g., a predetermined region) is thinner than a thicknessof the first inorganic film 101 corresponding to the insulating patternIP.

According to embodiments of FIGS. 9 through 14, an organic film 107P forcovering the insulating pattern IP is further included compared toembodiments of FIGS. 3 and 5 through 6.

Referring to FIG. 9, the organic film 107P covering the top and sidesurfaces of the insulating pattern IP is further included compared to anembodiment of FIG. 3, and referring to FIG. 10, the organic film 107Pcovering the top and side surfaces of the second inorganic pattern 102Pincluded in the insulating pattern IP is further included compared to anembodiment of FIG. 5. Referring to FIG. 11, the organic film 107Pcovering the top and side surfaces of the first and second inorganicpatterns 101P and 102P included in the insulating pattern IP is furtherincluded compared to an embodiment of FIG. 5.

Referring to FIG. 12, the organic film 107P covering the top and sidesurfaces of the second inorganic pattern 102P included in the insulatingpattern IP is further included compared to an embodiment of FIG. 6.Referring to FIG. 13, the organic film 107P covering the top and sidesurfaces of the second inorganic pattern 102P included in the insulatingpattern IP is further included compared to an embodiment of FIG. 7.

Referring to FIG. 14, the organic film 107P covering the top and sidesurfaces of the second inorganic pattern 102P included in the insulatingpattern IP is further included compared to an embodiment of FIG. 8.

In some embodiments, the organic film 107P may be formed to be coupledto at least one organic film included in the central area CA. Forexample, the organic film 107P may be located in the central area CA tocover a TFT, and may be coupled to a passivation film that flattensunevenness caused by the TFT. According to another embodiment, theorganic film 107P may be coupled to a pixel-defining film for definingan emission region by covering a part of a pixel electrode located on apassivation film. In other words, while forming a passivation film or apixel-defining film in the central area CA, the organic film 107P may beformed together so as not to have to perform an additional process.

According to embodiments of FIGS. 9 through 14, even when a remainingmetal film is left on the side surface of the second inorganic pattern102P, the organic film 107P covers the remaining metal film, and thus ashort circuit generated by the remaining metal film may be prevented.

FIGS. 15 and 16 are enlarged plan views of modified examples of FIG. 2.For convenience of description, only differences from theabove-described embodiments will be mainly described.

Referring to FIG. 15, a plurality of pads 106′a have inclined shapes.For example, an angle θ₁ formed by an extension line of the pad 106′a,for example, a center line of the pad 106′a, and an edge of a substratemay be smaller than 90°. Also, an angle θ₂ formed by a boundary line ofa slit S′, for example, a center line of the slit S′, and the edge ofthe substrate may be smaller than 90°.

In some embodiments, the angles θ₁ and θ₂ may be the same. Accordingly,the pad 106′a and the insulating pattern IP are formed in parallel.

In other embodiments, however, the inclined shapes of the plurality ofpads 106′a may vary. In other words, the angle θ₁ may be larger than90°. In this case, the angle θ₂ may also be larger than 90°.

Alternatively, the inclined shapes of the plurality of pads 106′a formedin one region of the substrate and the inclined shapes of the pluralityof pads 106′a formed in another region of the substrate may be differentfrom each other. In other words, a plurality of the angles θ₁ may existon one substrate.

Alternatively, as shown in FIG. 16, dummy insulating patterns DIP″ anddummy slits DS″ may be further formed together with a plurality of pads106″a and a plurality of slits S″. The dummy insulating patterns DIP″ donot correspond to the pads 106 a″, and are spaced apart from each otheracross the dummy slits DS″.

Inclined shapes of the pads 106″a and slits S″ are the same as those ofFIG. 15, and thus details thereof are not repeated.

Here, like the slits S″, the dummy slits S″ have inclined shapes.

FIGS. 17 through 25 are cross-sectional views for describing a method ofmanufacturing the display device 1000 of FIG. 1 based on a line b-b′ ofFIG. 1, according to an embodiment of the present invention. A processof manufacturing the insulating pattern IP according to an embodiment ofFIG. 3 is included.

Referring to FIG. 17, the substrate 100 is prepared first. The substrate100 may be formed of any one of various materials, and in someembodiments, may be formed of a flexible material as described above.The first inorganic film 101 is formed on the substrate 100. The firstinorganic film 101 may be functionally a buffer film, wherein the bufferfilm is formed on all of the central area CA of the substrate 100including the display area DA, the non-display area NDA, and the padarea PDA, and the peripheral region PA around the cutting line CLincluding the pad peripheral area PPA. In other words, the buffer filmmay be formed on the entire top surface of the substrate 100. Here, thesubstrate 100 may be the substrate 100 where one display device 1000 isto be formed, or a mother glass where a plurality of the display devices1000 are to be formed.

The buffer film may be formed via one of various deposition methods,such as a plasma enhanced chemical vapor deposition (PECVD) method, anatomic pressure CVD (APCVD) method, and a low pressure CVD (LPCVD)method, by using SiO₂ and/or SiN_(x).

Referring to FIG. 18, a TFT is formed in the display area DA on thebuffer film. The TFT formed on the display area DA operates as a part ofa pixel circuit. Here, the TFT may also be formed on the non-displayarea NDA. The TFT formed on the non-display area NDA may operate as apart of a circuit included in a driver.

Herein, the TFT is a top gate type that includes an active layer 102, agate electrode 104, and source and drain electrodes 106 s and 106 dsequentially from the buffer film. However, a type of the TFT is notlimited thereto, and the TFT may be any one of various types, such as abottom gate type.

The active layer 102 is formed on the buffer film, in a pattern shape.The active layer 102 includes a semiconductor material, for example,amorphous silicon or polycrystalline silicon. However, an embodiment ofthe present invention is not limited thereto, and the active layer 102may include any one of various materials. In some embodiments, theactive layer 102 may include an organic semiconductor material.

In some embodiments, the active layer 102 may include an oxidesemiconductor material. For example, the active layer 102 may includeG-I—Z—O[(In₂O₃)a(Ga₂O₃)b(ZnO)c], wherein a, b, and c are each a realnumber satisfying b≥0, and c>0. The active layer 102 may include, asidefrom G-I—Z—O, for example, an oxide of a material selected from group12, 13, and 14 metal elements, such as zinc (Zn), indium (In), gallium(Ga), tin (Sn), cadmium (Cd), germanium (Ge), and hafnium (Hf), or acombination thereof.

As described above, the current embodiment may include a TFT in any oneof various shapes, for example, may include a TFT having a bottom gatestructure. When the active layer 102 includes an oxide or amorphoussilicon, the current embodiment may include the TFT having a bottom gatestructure.

The TFT having a bottom gate structure may have any one of variousshapes, for example, the gate electrode 104 may be formed on thesubstrate 100, the active layer 102 may be formed on the gate electrode104, and the source and drain electrodes 106 s and 106 d may be arrangedon the active layer 102. Alternatively, the gate electrode 104 may beformed on the substrate 100, the source and drain electrodes 106 s and106 d may be formed on the gate electrode 104, and the active layer 102may be formed on the source and drain electrodes 106 s and 106 d. Inthis case, an insulating film, for example, an inorganic film, may beformed to contact at least one of the gate electrode 104, the activelayer 102, the source electrode 106 s, and the drain electrode 106 d.

The active layer 102 includes source and drain regions respectivelycontacting the source and drain electrodes 106 s and 106 d, and achannel region located between the source and drain regions. When theactive layer 102 includes amorphous silicon or polycrystalline silicon,an impurity may be selectively doped on the source and drain regions.

A gate insulating layer 103 is formed on the active layer 102. The gateinsulating layer 103 may be formed of a multilayer or single layerformed of an inorganic material, for example, silicon oxide and/orsilicon nitride. The gate insulating layer 103 insulates the activelayer 102 and the gate electrode 104 from each other.

The gate insulating layer 103 may be one layer forming the secondinorganic pattern 102P, and may be formed on the entire central area CAof the substrate 100 including the display area DA, the non-display areaNDA, and the pad area PDA, and the peripheral area PA around the cuttingline CL including the pad peripheral area PPA. In other words, the gateinsulating layer 103 may be formed on the entire substrate 100. Here,the substrate 100 may be the substrate 100 where one display device 1000is formed, or a mother glass where a plurality of the display devices1000 are formed.

The gate electrode 104 is formed on the gate insulating layer 103, in apattern shape. The gate electrode 104 is coupled to a gate line forapplying an on/off signal to the TFT. The gate electrode 104 may beformed of a low resistance metal material, for example, may be formed ina multilayer or single layer formed of a conductive material, such asmolybdenum (Mo), aluminum (Al), copper (Cu), or titanium (Ti).

An interlayer dielectric film 105 is formed on the gate electrode 104.The interlayer dielectric film 105 insulates the source and drainelectrodes 106 s and 106 d and the gate electrode 104 from each other.The interlayer dielectric film 105 may be formed in a multilayer orsingle layer formed of an inorganic material. For example, the inorganicmaterial may be a metal oxide or a metal nitride, and the inorganicmaterial may include silicon oxide (SiO₂), silicon nitride (SiN_(x)),silicon oxynitride (SiON), aluminum oxide (Al₂O₃), titanium oxide(TiO₂), tantalum oxide (Ta₂O₅), hafnium oxide (HfO₂), and zinc oxide(ZrO₂).

The interlayer dielectric film 105 may be one layer forming the secondinorganic pattern 102P, and may be formed on an entirety of the centralarea CA of the substrate 100 including the display area DA, thenon-display area NDA, and the pad area PDA, and the peripheral area PAaround the cutting line CL including the pad peripheral area PPA. Inother words, the interlayer dielectric film 105 may be formed on theentire substrate 100. Here, the substrate 100 may be the substrate 100where one display device 1000 is formed, or a mother glass where aplurality of the display devices 1000 are formed.

Then, referring to FIG. 19, a contact hole CNT is formed in the gateinsulating layer 103 and the interlayer dielectric film 105, and at thesame time, is patterned with respect to the peripheral area PA.

The contact hole CNT is formed such that a surface (e.g., apredetermined surface) of the active layer 102 is exposed. The contacthole CNT may later enable the source and drain electrodes 106 s and 106d to be electrically coupled to the active layer 102. Meanwhile, whileforming the contact hole CNT, removing the gate insulating layer 103 andthe interlayer dielectric film 105 in the peripheral area PA and formingthe insulating pattern IP in the pad peripheral area PPA areconcurrently (e.g., simultaneously) performed. In other words, the gateinsulating layer 103 and the interlayer dielectric film 105 in theperipheral area PA around the cutting line CL is also removed, and theslit S for forming the insulating pattern IP is formed in the padperipheral area PPA. As such, according to an embodiment of the presentinvention, the manufacturing process may be simplified because aseparate process for patterning the gate insulating layer 103 and theinterlayer dielectric film 105 in the peripheral area PA may not berequired.

Referring to FIG. 20, a metal layer 106 f, for forming the source anddrain electrodes 106 s and 106 d, and the pad 106 a is formed on theinterlayer dielectric film 105. The metal layer 106 f may be formed asmultiple layers or as a single layer of a conductive material, such asMo, Al, Cu, or Ti, of which electrical resistance is low.

Then, referring to FIG. 21, the metal layer 106 f is patterned to formthe source and drain electrodes 106 s and 106 d, and the pad 106 a. Thesource and drain electrodes 106 s and 106 d respectively contact thesource and drain regions of the active layer 102 through the contacthole CNT formed in the interlayer dielectric film 105 and gateinsulating layer 103. Also, the pad 106 a is formed in the pad area PDA.

Meanwhile, a remaining metal film 106 p may be left on side surfaces ofinorganic films of the pad peripheral area PPA, for example, the gateinsulating layer 103 and the interlayer dielectric film 105, if a metallayer is not completely removed. The remaining metal film 106 p maygenerate a short circuit while bonding the circuit board 200 on which anexternal circuit is mounted to the pad 106 a later.

Referring to FIG. 22, a passivation film 107 is formed to cover the TFT.

The passivation film 107 resolves a stepped portion caused by the TFTand flattens the top surface of the TFT, thereby preventing a defect ofan organic light-emitting device (OLED) caused by bottom unevenness. Thepassivation film 107 may be formed in a single layer or multilayerformed of an organic material. The organic material may include ageneral commercial polymer, such as polymethylmethacrylate (PMMA) orpolystylene (PS), a polymer derivative having a phenol-based group, anacryl-based polymer, an imide-based polymer, an arylether-based polymer,an amide-based polymer, a fluorine-based polymer, a p-xylene-basedpolymer, a vinyl alcohol-based polymer, and a combination thereof.Alternatively, the passivation film 107 may be formed of a complexstacked body of an inorganic insulating film and an organic insulatingfilm.

Then, the OLED is formed on the passivation film 107 referring to FIGS.23 through 26.

A hole 107 a that exposes one of the source and drain electrodes 106 sand 106 d, and an opening 107 b that exposes the top surface of the pad106 a are formed in the passivation film 107. The hole 107 a is apassage for electrically coupling the TFT and the OLED that is formedlater. Meanwhile, the opening 107 b is a passage for electricallycoupling the pad 106 a and the circuit board 200 on which an externalcircuit is mounted by exposing the pad 106 a.

Next, the OLED is formed on the passivation film 107. The OLED includesa pixel electrode 111, a counter electrode 112 facing the pixelelectrode 111, and an intermediate layer 113 between the pixel andcounter electrodes 111 and 112. A display device is classified into abottom emission type, a top emission type, and a dual emission typeaccording to an emission direction of the OLED. In the bottom emissiontype, the pixel electrode 111 is a transmissive electrode and thecounter electrode 112 is a reflective electrode. In the top emissiontype, the pixel electrode 111 is a reflective electrode and the counterelectrode 112 is a semi-transmissive electrode. In the dual emissiontype, the pixel electrode 111 and the counter electrode 112 are bothtransmissive electrodes. In the current embodiment, an organiclight-emitting display device is a top emission type.

Referring to FIG. 23, the pixel electrode 111 may be patterned in anisland shape. Also, the pixel electrode 111 contacts the TFT included inthe pixel circuit through a hole of the passivation film 107. Meanwhile,the pixel electrode 111 may be formed to overlap the TFT such that thepixel circuit below the pixel electrode 111 is hidden.

The pixel electrode 111 includes a reflection electrode layer, as wellas a transparent electrode layer, such that light may be reflected in adirection of the counter electrode 112. When the pixel electrode 111operates as an anode, the transparent electrode layer may include atleast one material selected from the group consisting of a transparentconductive oxide having a high work function, such as an indium tinoxide (ITO), an indium zinc oxide (IZO), a zinc oxide (ZnO), an indiumoxide (In₂O₃), an indium gallium oxide (IGO), and an aluminum zinc oxide(AZO). The reflection electrode layer may include a metal having highreflectivity, such as silver (Ag).

Also, a pixel-defining film 109 is formed on the passivation film 107.The pixel-defining film 109 may be formed of at least one organicinsulating material selected from the group consisting of polyimide,polyamide, acrylic resin, benzocyclobutene, and phenol resin, via a spincoating method or the like. The pixel-defining film 109 includes anopening 109 a that covers an edge and opens at least a center portion ofthe pixel electrode 111. A region limited by the opening 109 acorresponds to an emission region and the intermediate layer 113 isformed in the region.

Then, referring to FIG. 24, the first inorganic film 101 in theperipheral area PA is patterned.

Although not illustrated, the first inorganic film 101 that is exposedaround the cutting line CL is removed, and with respect to the padperipheral area PPA, the first inorganic film 101 is removed so as toform the slit S that exposes the top surface of the substrate 100.Accordingly, in the pad peripheral area PPA, the insulating patterns IPeach including the first inorganic pattern 101P and the second inorganicpattern 102P may be formed across the slit S where the substrate 100 isexposed.

While patterning the first inorganic film 101, side ends of the gateinsulating layer 103 and the interlayer dielectric film 105 and a sideend of the first inorganic film 101 may be matched. In this case, aremaining metal film on the side surface of the second inorganic pattern102P may be removed while patterning the first inorganic film 101. Assuch, by removing the remaining metal film of the pad peripheral areaPPA, a short circuit may be prevented (or substantially prevented),which may improve the reliability of the display device 1000.

In the current embodiment, the insulating pattern IP may be formed byusing the first inorganic film 101 operating as a buffer film, the gateinsulating layer 103, and the interlayer dielectric film 105. Althoughnot illustrated, when the TFT according to the current embodiment has abottom gate structure as described above, for example, when an activelayer including an oxide semiconductor material is formed, theinsulating pattern IP may be formed by using the first inorganic film101 operating as a buffer film, a gate insulating layer to be locatedbetween an active layer and a gate electrode, and a passivation filmthat may be formed on source and drain electrodes.

Alternatively, the current embodiment may include the TFT having any oneof various shapes, and in this case, the insulating pattern IP may beformed by extending an insulating layer in any one of various types,which is adjacent to or directly contacts an active layer, a gateelectrode, and source and drain electrodes.

Then, referring to FIG. 25, the intermediate layer 113 is formed in theemission region. The intermediate layer 113 includes an organic emissionlayer emitting red, green, or blue light, wherein the organic emissionlayer may be formed of a low molecular organic material or a highmolecular organic material. When the organic emission layer is a lowmolecular organic layer formed of a low molecular organic material, ahole transport layer (HTL) and a hole injection layer (HIL) are locatedin a direction of the pixel electrode 111, and an electron transportlayer (ETL) and an electron injection layer (EIL) are stacked in adirection of the counter electrode 112 based on the organic emissionlayer. Here, any one of various layers other than an HTL, an HIL, anETL, and an EIL may be further stacked if required.

Meanwhile, organic emission layers may be separately formed according toan organic light-emitting device. In this case, the organic emissionlayers may each emit red, green, or blue light according to an organiclight-emitting device. However, an embodiment of the present inventionis not limited thereto, and an organic emission layer may be commonlyformed on an entire surface of an organic light-emitting device. Forexample, a plurality of organic emission layers emitting red, green, andblue lights may be perpendicularly stacked or mixed to emit a whitelight. Here, a combination of colors for emitting a white light is notlimited to the above description. However, in this case, a colorconverting layer or a color filter for converting the white light intoanother color (e.g., a predetermined color) may be separately included.

Next, the counter electrode 112 is formed to cover an entire surface ofthe substrate 100. The counter electrode 112 may be formed of aconductive inorganic material. When the counter electrode 112 operatesas a cathode, the counter electrode 112 may be formed of a metal havinga low work function, such as lithium (Li), calcium (Ca), lithiumfluoride/calcium (LiF/Ca), lithium fluoride/aluminum (LiF/Al), aluminum(Al), magnesium (Ag), or silver (Ag), or a thin film of the metals forlight penetration. The counter electrode 112 may be formed as a commonelectrode on an entire surface of the display area DA where an image isrealized. Here, the counter electrode 112 may be formed via anevaporation process that may not damage the intermediate layer 113.Meanwhile, polarities of the pixel electrode 111 and the counterelectrode 112 may be switched with each other. The display device 1000is finally completed by forming the counter electrode 112.

Although not illustrated, an insulating capping layer may be furtherformed on the counter electrode 112. The insulating capping layer maymaintain a work function of the counter electrode 112 and prevent anorganic material included in the intermediate layer 113 from beingdamaged while forming an encapsulation thin film via a sputteringprocess or a PECVD process. The insulating capping layer is a selectivecomponent and may not be included.

Then, although not illustrated, the OLED may be sealed by a sealing filmto block external moisture or external air. The sealing film may have athin film shape, wherein, for example, a film formed of an inorganicmaterial, such as SiO_(x) or SiN_(x), and a film formed of an organicmaterial, such as epoxy or polyimide, are alternately stacked on eachother. However, alternatively, the sealing film may include a filmformed of low melting glass.

By sealing the OLED by using the sealing film, the display device 1000may have an overall flexible characteristic. Accordingly, the displaydevice 1000 according to some embodiments of the present invention maybe bent, folded, and rolled.

However, the current embodiment is not limited thereto, and a sealingmember formed of any one of other various materials may be formed on theOLED.

FIGS. 26 and 27 are cross-sectional views for describing a method ofmanufacturing the display device 1000 of FIG. 1 based on the line b-b′of FIG. 1, according to another embodiment of the present invention. InFIGS. 26 and 27, a process of manufacturing the insulating pattern IPaccording to an embodiment of FIG. 5 is included.

According to FIG. 26, while patterning the first inorganic film 101 inthe peripheral area PA, the gate insulating layer 103 and the interlayerdielectric film 105 may not completely cover the top surface of thefirst inorganic film 101, i.e., the first inorganic film 101 mayprotrude farther than ends of the gate insulating layer 103 and theinterlayer dielectric film 105.

Meanwhile, in a process of manufacturing the insulating pattern IPaccording to an embodiment of FIG. 6, a process of patterning the firstinorganic film 101 is omitted from the method of FIGS. 17 through 25,and overlapping descriptions will not be repeated here.

Meanwhile, in a process of manufacturing the insulating pattern IPaccording to an embodiment of FIGS. 7 and 8, a process of patterning apart of the first inorganic film 101 is included in the method of FIGS.17 through 25, and overlapping descriptions will not be repeated here.

FIGS. 28 through 31 are cross-sectional views for describing a method ofmanufacturing the display device 1000 of FIG. 1 based on the line b-b′of FIG. 1, according to another embodiment of the present invention. InFIGS. 28 through 31, a process of manufacturing the insulating patternIP according to an embodiment of FIG. 10 is included.

Referring to FIG. 28, while forming the passivation film 107, thepassivation film 107 may also cover the top and side surfaces of thesecond inorganic pattern 102P in the pad peripheral area PPA.Accordingly, the remaining metal film that may be left on the sidesurface of the second inorganic pattern 102P may be covered by thepassivation film 107, thereby preventing a short circuit.

FIG. 29 illustrates a process of forming the pixel-defining film 109like in FIG. 23, and FIG. 30 illustrates a process of patterning thefirst inorganic film 101 in the peripheral area PA like in FIG. 24. InFIG. 30, the side end surfaces of the gate insulating layer 103 and theinterlayer dielectric film 105 and the side end surface of the firstinorganic film 101 are patterned not to match each other, such that thetop surface of the first inorganic film 101 is partially exposed, unlikein FIG. 24. FIG. 31 illustrates processes of forming the intermediatelayer 113 and the counter electrode 112 like in FIG. 25.

Meanwhile, also in embodiments of FIGS. 9 and 11 through 14, processesof covering at least the second inorganic pattern 102P by the organicfilm 107P described above with reference to FIGS. 28 through 31 arefurther added, and overlapping descriptions are not repeated here.

Characteristics of the display device 1000 according to an embodiment ofthe present invention will now be described in more detail withreference to FIGS. 32 through 36.

FIG. 32 is a plan view schematically illustrating the display device1000 according to a comparative example. FIG. 33 is an enlarged planview of a region VII of FIG. 32.

In FIG. 32, the circuit board 200 on which an external circuit ismounted is bonded to the pad 106 a. On the circuit board 200, chips fortransmitting various types of power or electric signals to the displayarea DA are mounted. The chips are not shown in FIG. 32. The circuitboard 200 includes the wires 106 l for coupling the chips and the pads106 a of the substrate 100. Here, by bonding the wires 106 l to the pads106 a, various types of power or electric signals output from the chipsmay be transmitted to the display area DA through the pads 106 a.

Referring to FIG. 33, when the insulating pattern IP and the slit S arenot included in the pad peripheral area PPA, an impurity, a particle, ora remaining metal film remaining while forming a metal film may be left,and due to such a remaining metal film, the wires 106 l may beelectrically shorted, thereby generating a short circuit.

FIG. 34 is a plan view schematically illustrating the display device1000 according to an embodiment of the present invention, FIG. 35 is anenlarged plan view of a region IX of FIG. 34, and FIG. 36 is across-sectional view taken along a line Q-Q′ of FIG. 35.

Referring to FIGS. 34 and 36, the current embodiment is substantiallysimilar to the comparative example in that the circuit board 200includes the wires 106I, but is different from the comparative examplein that the insulating pattern IP and the slit S are located in the padperipheral area PPA of the substrate 100.

Referring to FIG. 35, because the insulating pattern IP and the slit Sare arranged in the pad peripheral area PPA, even when a remaining metalfilm is left on a side surface of an inorganic film removed to form theslit S, the wires 106I are not electrically shorted by the remainingmetal film. In other words, the wires 106I are arranged correspondinglyto the insulating pattern IP or the slit S is arranged between the wires106I. As shown in FIG. 36, the wires 106I may extend on the insulatingpattern IP, for example, on the second inorganic pattern 102P of theinsulating pattern IP.

Accordingly, a short circuit, like in the comparative example, may notbe generated.

As described above, according to the one or more of the aboveembodiments of the present invention, in a display device, a shortdefect is prevented (or substantially prevented) while bonding a circuitboard on which an external circuit is mounted.

While one or more embodiments of the present invention have beendescribed with reference to the figures, it will be understood by thoseof ordinary skill in the art that various changes in form and detailsmay be made therein without departing from the spirit and scope of thepresent invention as defined by the following claims.

What is claimed is:
 1. A method of manufacturing a display device, thedisplay device comprising a central area having a display area on asubstrate, and a peripheral area around the central area, the methodcomprising: forming, in the central area, a plurality of pads along onedirection; forming, in a region of the peripheral area adjacent to theplurality of pads, a plurality of insulating patterns corresponding tothe plurality of pads; and forming a slit between the plurality ofinsulating patterns by a portion of an insulating material of theplurality of insulating patterns.
 2. The method of claim 1, furthercomprising forming an inorganic film in a central area of the substrate,wherein the plurality of insulating patterns comprise the inorganicfilm.
 3. The method of claim 2, wherein the at least one inorganic filmcomprises a plurality of layers.
 4. The method of claim 3, furthercomprising: forming the plurality of insulating patterns spaced apartfrom each other across the slit by patterning a layer comprising atleast an uppermost layer from among the plurality of layers of theinorganic film; and after forming the plurality of insulating patterns,forming the plurality of pads on any one of the plurality of layers ofthe inorganic film.
 5. The method of claim 4, further comprising, afterforming the plurality of pads, removing a layer comprising at least alowermost layer of the plurality of layers of the inorganic film, in aregion corresponding to the slit.
 6. The method of claim 1, wherein theperipheral area comprises a region exposing a top surface of thesubstrate.
 7. A display device comprising: a central area having adisplay area on a substrate; a peripheral area around the central area;a plurality of pads in a pad area; a plurality of insulating patternsadjacent the plurality of pads and in a pad peripheral area between theplurality of pads and an edge of the substrate, the plurality ofinsulating patterns extending from the pad area to the edge of thesubstrate; and a slit between the plurality of insulating patterns inthe peripheral area and extending to the edge of the substrate.
 8. Thedisplay device of claim 7, wherein the plurality of pads each comprisean extension line, and wherein the plurality of insulating patternsoverlap the extension lines.
 9. The display device of claim 7, whereinthe plurality of insulating patterns comprise an inorganic material. 10.The display device of claim 7, further comprising an organic filmcovering an uppermost surface and at least one region of a side surfaceof the plurality of insulating patterns.
 11. The display device of claim7, wherein the peripheral area comprises a region exposing a top surfaceof the substrate.
 12. The display device of claim 11, wherein theperipheral area comprises a pad peripheral area adjacent to theplurality of pads and comprises the plurality of insulating patterns andthe slit, and wherein the region exposing the top surface of thesubstrate is adjacent to the pad peripheral area.
 13. The display deviceof claim 11, wherein the region exposing the top surface of thesubstrate is adjacent to an edge of the substrate.
 14. The displaydevice of claim 7, wherein an edge of the substrate is defined by acutting line.
 15. The display device of claim 7, wherein at least oneinorganic film is in a central area of the substrate.
 16. The displaydevice of claim 15, wherein the plurality of insulating patterns have ashape coupled to the at least one inorganic film.
 17. The display deviceof claim 15, wherein the plurality of pads are on the at least oneinorganic film.
 18. The display device of claim 15, wherein the at leastone inorganic film comprises a plurality of layers.
 19. The displaydevice of claim 7, wherein the plurality of insulating patterns comprisea plurality of inorganic patterns stacked on each other.
 20. The displaydevice of claim 19, wherein the plurality of insulating patternscomprise a first inorganic pattern, and a second inorganic pattern onthe first inorganic pattern.